The global Electrification of Everything transformation is underway.
The global Electrification of Everything transformation is underway.
The global Electrification of Everything transformation is underway.
The global Electrification of Everything transformation is underway.
The global Electrification of Everything transformation is underway.
Pakal is here to help with the world’s most efficient switch for high-voltage(>400 V) electric power conversion – in simple, scalable, cost-effective silicon.
Pakal is here to help with the world’s most efficient switch for high-voltage(>400 V) electric power conversion – in simple, scalable, cost-effective silicon.
Pakal is here to help with the world’s most efficient switch for high-voltage(>400 V) electric power conversion – in simple, scalable, cost-effective silicon.
Pakal is here to help with the world’s most efficient switch for high-voltage(>400 V) electric power conversion – in simple, scalable, cost-effective silicon.
Pakal is here to help with the world’s most efficient switch for high-voltage(>400 V) electric power conversion – in simple, scalable, cost-effective silicon.
The Electrification of Everything is an urgent transformation that will address climate risks and raise standards of living globally.
From EVs to solar to induction heating— every component of the electrification of everything works better, will be adopted faster and costs less with improved power conversion.
To improve power conversion efficiency, we need more efficient power semiconductors — and massively more of them — everywhere.
Our novel IGTO(t) is a direct drop-in upgrade for all IGBTs.
Pakal presents the IGTO(t), the first new high-voltage silicon power switch since the IGBT was brought to market 45 years ago.
Our novel IGTO(t) is a direct drop-in upgrade for all IGBTs.
Pakal presents the IGTO(t), the first new high-voltage silicon power switch since the IGBT was brought to market 45 years ago.
Our novel IGTO(t) is a direct drop-in upgrade for all IGBTs.
Pakal presents the IGTO(t), the first new high-voltage silicon power switch since the IGBT was brought to market 45 years ago.
Our novel IGTO(t) is a direct drop-in upgrade for all IGBTs.
Pakal presents the IGTO(t), the first new high-voltage silicon power switch since the IGBT was brought to market 45 years ago.
Pakal presents the IGTO(t), the first new high-voltage silicon power switch since the IGBT was brought to market 45 years ago.
Our novel IGTO(t) is a direct drop-in upgrade for all IGBTs.
Pakal’s IGTO(t) is:
Like the IGBT, the IGTO(t) has a “switching loss vs conduction loss” trade-off curve. Compared to the best IGBT, Pakal’s breakthrough patented physics shift the curve permanently down and to the left.
Today, we already beat the efficiency of the best IGBTs. With equalized switching, we offer dramatically lower VCE(sat) (often>0.40 V lower) under real-world operating conditions compared to the best IGBTs. In addition, our IGTO(t) is a platform which over time will extend to all IGBT use cases, voltage and current ratings - and beyond. We have an aggressive development and product release roadmap that will dramatically extend our silicon efficiency advantage for many years to come.
Pakal’s IGTO(t) is:
Like the IGBT, the IGTO(t) has a “switching loss vs conduction loss” trade-off curve. Compared to the best IGBT, Pakal’s breakthrough patented physics shift the curve permanently down and to the left.
Today, we already beat the efficiency of the best IGBTs. With equalized switching, we offer dramatically lower VCE(sat) (often>0.40 V lower) under real-world operating conditions compared to the best IGBTs. In addition, our IGTO(t) is a platform which over time will extend to all IGBT use cases, voltage and current ratings - and beyond. We have an aggressive development and product release roadmap that will dramatically extend our silicon efficiency advantage for many years to come.
Pakal’s IGTO(t) is:
Like the IGBT, the IGTO(t) has a “switching loss vs conduction loss” trade-off curve. Compared to the best IGBT, Pakal’s breakthrough patented physics shift the curve permanently down and to the left.
Today, we already beat the efficiency of the best IGBTs. With equalized switching, we offer dramatically lower VCE(sat) (often>0.40 V lower) under real-world operating conditions compared to the best IGBTs. In addition, our IGTO(t) is a platform which over time will extend to all IGBT use cases, voltage and current ratings - and beyond. We have an aggressive development and product release roadmap that will dramatically extend our silicon efficiency advantage for many years to come.
Efficient
Cost-effective
We believe price matters. A solution that is 3x the cost of silicon cannot adequately ADDRESS the Electrification of Everything challenge. Given our production profile, we can offer the dramatic efficiency gains of the IGTO(t) at comparable prices to IGBTs.
Efficient
Drop-in compatible
The operational physics of the IGTO(t) core cell are novel and superior to the IGBT. However, our voltage gate driven switching mechanism is identical to that of the IGBT. As a result, the IGTO(t) is a direct drop-in improvement for the IGBT. We are compatible with industry standard drivers and controllers with standard 0 - +15 V, or -15 - +15 V drive switching.
Efficient
Inherently more efficient than the best IGBTs
Like the IGBT, the IGTO(t) has a “switching loss vs conduction loss” trade-off curve. Compared to the best IGBT, Pakal’s breakthrough patented physics shifts this trade-off curve permanently down and to the left.
Today, we already beat the efficiency of the best IGBTs. With equalized switching, we offer dramatically lower VCE(sat) (often>0.40 V lower) under real-world operating conditions compared to the best IGBTs. In addition, our IGTO(t) is a platform which over time will extend to all IGBT use cases and voltage and current ratings – and beyond. We have an aggressive development and product release roadmap that will dramatically extend our silicon efficiency advantage for many years to come.
Pakal’s IGTO(t) is:
Efficient
Globally, rapidly scalable
The IGTO(t) is scalable and manufacturable globally on cost-effective (>130 nm) production equipment. We have well-established production processes, with silicon yield, pricing and reliability.
We assembled the world’s leading team of silicon device physicists to check all these boxes. The scale and the urgency of the Electrification of Everything transformation are unprecedented.
We assembled the world’s leading team of silicon device physicists to check all these boxes. The scale and the urgency of the Electrification of Everything transformation are unprecedented.
