Pakal Technologies is a next-gen Fabless Power Semiconductor company.
We intend to revolutionize the high-voltage silicon power conversion market.
We are here to make a difference and to make power conversion simpler and better. We have assembled the best technical team in the world to solve old power-conversion problems with novel physics in simple silicon.
Cost-effective
Cost-effective
We believe price matters. A solution that is 3x the cost of silicon cannot adequately ADDRESS the Electrification of Everything challenge. Given our production profile, we can offer the dramatic efficiency gains of the IGTO(t) at comparable prices to IGBTs.
Drop-in compatible
Drop-in compatible
The operational physics of the IGTO(t) core cell are novel and superior to the IGBT. However, our voltage gate driven switching mechanism is identical to that of the IGBT. As a result, the IGTO(t) is a direct drop-in improvement for the IGBT. We are compatible with industry standard drivers and controllers with standard 0 - +15 V, or -15 - +15 V drive switching.
Inherently more efficient than the best IGBTs
Inherently more efficient than the best IGBTs
Like the IGBT, the IGTO(t) has a “switching loss vs conduction loss” trade-off curve. Compared to the best IGBT, Pakal’s breakthrough patented physics shifts this trade-off curve permanently down and to the left.
Today, we already beat the efficiency of the best IGBTs. With equalized switching, we offer dramatically lower VCE(sat) (often>0.40 V lower) under real-world operating conditions compared to the best IGBTs. In addition, our IGTO(t) is a platform which over time will extend to all IGBT use cases and voltage and current ratings – and beyond. We have an aggressive development and product release roadmap that will dramatically extend our silicon efficiency advantage for many years to come.
Pakal’s IGTO(t) is:
Globally, rapidly scalable
Globally, rapidly scalable
The IGTO(t) is scalable and manufacturable globally on cost-effective (>130 nm) production equipment. We have well-established production processes, with silicon yield, pricing and reliability.
Pakal presents the IGTO(t), the first new high-voltage silicon power switch since the IGBT was brought to market 50 years ago.
Our novel IGTO(t) is a direct drop-in upgrade for all IGBTs.
Our novel IGTO(t) is a direct drop-in upgrade for all IGBTs.
Pakal presents the IGTO(t), the first new high-voltage silicon power switch since the IGBT was brought to market 50 years ago.
Our novel IGTO(t) is a direct drop-in upgrade for all IGBTs.
Pakal presents the IGTO(t), the first new high-voltage silicon power switch since the IGBT was brought to market 50 years ago.
Our novel IGTO(t) is a direct drop-in upgrade for all IGBTs.
Pakal presents the IGTO(t), the first new high-voltage silicon power switch since the IGBT was brought to market 50 years ago.
Our novel IGTO(t) is a direct drop-in upgrade for all IGBTs.
Pakal presents the IGTO(t), the first new high-voltage silicon power switch since the IGBT was brought to market 50 years ago.
Pakal’s IGTO(t) is:
Inherently more efficient than the best IGBTs
Drop-in compatible
Cost-effective
Globally, rapidly scalable
Like the IGBT, the IGTO(t) has a “switching loss vs conduction loss” trade-off curve. Compared to the best IGBT, Pakal’s breakthrough patented physics shift the curve permanently down and to the left.
Today, we already beat the efficiency of the best IGBTs. With equalized switching, we offer dramatically lower VCE(sat) (often>0.40 V lower) under real-world operating conditions compared to the best IGBTs. In addition, our IGTO(t) is a platform which over time will extend to all IGBT use cases, voltage and current ratings - and beyond. We have an aggressive development and product release roadmap that will dramatically extend our silicon efficiency advantage for many years to come.
Pakal’s IGTO(t) is:
Inherently more efficient than the best IGBTs
Drop-in compatible
Cost-effective
Globally, rapidly scalable
Like the IGBT, the IGTO(t) has a “switching loss vs conduction loss” trade-off curve. Compared to the best IGBT, Pakal’s breakthrough patented physics shift the curve permanently down and to the left.
Today, we already beat the efficiency of the best IGBTs. With equalized switching, we offer dramatically lower VCE(sat) (often>0.40 V lower) under real-world operating conditions compared to the best IGBTs. In addition, our IGTO(t) is a platform which over time will extend to all IGBT use cases, voltage and current ratings - and beyond. We have an aggressive development and product release roadmap that will dramatically extend our silicon efficiency advantage for many years to come.
Pakal’s IGTO(t) is:
Inherently more efficient than the best IGBTs
Drop-in compatible
Cost-effective
Globally, rapidly scalable
Like the IGBT, the IGTO(t) has a “switching loss vs conduction loss” trade-off curve. Compared to the best IGBT, Pakal’s breakthrough patented physics shift the curve permanently down and to the left.
Today, we already beat the efficiency of the best IGBTs. With equalized switching, we offer dramatically lower VCE(sat) (often>0.40 V lower) under real-world operating conditions compared to the best IGBTs. In addition, our IGTO(t) is a platform which over time will extend to all IGBT use cases, voltage and current ratings - and beyond. We have an aggressive development and product release roadmap that will dramatically extend our silicon efficiency advantage for many years to come.
We seek long-term partners to scale with us as we improve power conversion everywhere.
Pakal Technologies’ IGTO(t) core cell is a platform technology just like the Trench/Fieldstop IGBT core cell. The IGTO(t) core cell will scale into every application, voltage and current rating where the IGBT goes - and beyond.
Our technical team includes the inventor of the Trench MOSFET as well as the creators of the SBR and FERD diode families. We are a world-class team of seasoned entrepreneurs, foundry and silicon-process and business experts.
We know silicon and we know power.
Our team has over 150 years of collective experience in the semiconductor field and over 400 issued patents.